Universitäre Service-Einrichtung für Transmissionselektronenmikroskopie
TEM of Polymeres
Fr. 28. November 2008, 10:30 s.t., 7.OG Freihaus, SEM138B
Dipl.-Ing. Marina Lomoschitz
von: Institut für Materialchemie
High Resolution TEM 2
Fr. 14. November 2008, 9:30 s.t., 7.OG Freihaus, SEM138B
Univ.Prof. Dr. Peter Pongratz
von: Institute for Solid State Physics
contents:
- beam propagation in a crystal field
- Bloch wave theory
Dielectric properties fron MAX phases
Fr. 31. Oktober 2008, 10:30 s.t., 7.OG Freihaus, SEM138B
Dr. Vincent Mauchamp
von: Universite Portiers
High-Resolution TEM 1
Fr. 17. Oktober 2008, 10:30 s.t., 7.OG Freihaus, SEM138B
Univ.Prof. Dr. Peter Pongratz
von: Institute for Solid State Physics
contents:
- Contrast Transfer Function
- Abberations
- coma free alignment
Precipitation studies in Al alloys
Fr. 12. September 2008, 10:30 s.t., 9.OG Freihaus, SEM138C
Study of focused ion beam response of Si (111) at elevated temperatures
Do. 28. August 2008, 10:30 s.t., 9.OG Freihaus, SEM138C
Low Loss EELS - the influence of the surface
Do. 21. August 2008, 10:30 s.t., 9.OG Freihaus, SEM 138C
Univ.Ass. Dr. Michael Stöger-Pollach
Low loss EELS (= Valence EELS, VEELS) has attracted great interest since the re-descovery of Cerenkov losses in semiconductors by USTEM staff in 2005. We will discuss the influence of the surface losses on VEELS in the absence of relativistic effects on the determination of optical properties.
Simulations and experiments with different beam energies will be shown and discussed.
Convergent Beam Techniques
Do. 26. Juni 2008, 14:00 s.t., 7.OG Freihaus, SEM138A
Univ.Ass. Dr. Hayjong Chen
von: Institute for Solid State Physics
Sample preparation for future research
Do. 15. Mai 2008, 09:30 s.t., 9.OG Freihaus, SEM 138C
Univ.Ass. Dr. Michael Stöger-Pollach
An overview about the present sample preparation is given. Future aspects of preparation techniques will be discussed in focus of the research done at USTEM.
Nano-indentation
Do. 17. April 2008, 10:00 s.t., 9.OG Freihaus, SEM 138C
Dr. Lawrence Whitmore
An introduction to indentation techniques and theory. Includes a basic overview of the field, types of indenter, scales of indentation, static and dynamic tests, analysis of load-unload curves, and cross-section TEM studies of indentation in silicon wafers.
Density Matrix Approach
Thu 3rd April 2008, 11:00 s.t. 9.OG Freihaus, SEM138C